Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes
نویسندگان
چکیده
We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb graded (composition doping) absorbers of the same thickness. The quaternary UTC-PDs show a transit limited bandwidth 274 GHz in contrast 107 185 for absorber UTC-PDs. Because ternary only differ material, findings conclusively demonstrate enhanced transport GaInAsSb. Performance comparison GaInAs-based from literature suggest that GaInAsSb is superior material ? = 1.55 ?m high-speed photodetectors. Additionally, external responsivity (0.094 A/W) ~34% higher than PDs (0.070 A/W). This first demonstration
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ژورنال
عنوان ژورنال: Journal of Lightwave Technology
سال: 2021
ISSN: ['0733-8724', '1558-2213']
DOI: https://doi.org/10.1109/jlt.2020.3043537